the semiconductor device simulator “sentaurus”  (Synopsys Inc)

Journal: Scientific Reports

Article Title: Terahertz Optoelectronics with Surface Plasmon Polariton Diode

doi: 10.1038/srep04899

Figure Lengend Snippet: (a), The SPPD dispersion curves in air/ p -type/ n -type GaAs waveguide configuration for two doping concentrations; N A = 1 × 10 19 , N D = 5 × 10 19 cm −3 (red line), and N A = 1 × 10 19 , N D = 3 × 10 19 cm −3 (blue line). (b), Steady state minority carrier concentration profiles for different applied voltages. (c), The transmittance curves obtained using the integrated finite difference semiconductor and optical module (solid blue line) and the WKB approximation (dashed red line), show exponential decrease of the output signal for V > V c = 1.57 V and (d), SPP propagation across the SPPD drift-diffusion zone obtained at different applied voltages. In the calculations the operation frequency is set at 35 THz, the thickness of the p -type layer is d = 0.5 μm and the overall length of the active drift-diffusion region is fixed at w = 2 μm .

Article Snippet: A self-consistent model was developed by first calculating the electron and hole concentrations over the SPPD using commercial semiconductor device simulator (SENTAURUS, Synopsys Inc.).

Techniques: Dispersion, Concentration Assay, Diffusion-based Assay